III-Nitride ion implantation and device processing
- Sandia National Labs., Albuquerque, NM (United States)
- Florida Univ., Gainesville, FL (United States). Dept. of Materials Science and Engineering
- Hughes Research Labs., Malibu, CA (United States)
- Emcore Corp., Somerset, NJ (United States)
- Virginia Univ., Charlottesville, VA (United States). Dept. of Electrical Engineering
Ion implantation doping and isolation has played a critical role in realizing high performance photonic and electronic devices in all mature semiconductor materials; this is also expected for binary III-Nitride materials (InN, GaN, AlN) and their alloys as epitaxy improves and more advanced device structures fabricated. This paper reports on recent progress in ion implantation doping of III-Nitride materials that has led to the first demonstration of a GaN JFET (junction field effect transistor). The JFET was fabricated with all ion implantation doping; in particular, p-type doping of GaN with Ca has been demonstrated with an estimated acceptor ionization energy of 169 meV. O-implantation has also been studied and shown to yield n-type conduction with an ionization energy of {similar_to}29 meV. Neither Ca or O display measurable redistribution during a 1125 C, 15 s activation anneal which sets an upper limit on their diffusivity at this temperature of 2.7{times}10{sup {minus}13}cm{sup 2}/s.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 242674
- Report Number(s):
- SAND--96-1407C; CONF-960502--16; ON: DE96011840
- Country of Publication:
- United States
- Language:
- English
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