Ca and O ion implantation doping of GaN
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
- Hughes Research Laboratories, Malibu, California 90265 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- EMCORE Corporation, Somerset, New Jersey 08873 (United States)
{ital p}- and {ital n}-type doping of GaN have been realized by ion implantation of Ca and O, respectively. Rapid thermal annealing at 1100{degree}C or higher is required to achieve {ital p}-type conduction in Ca or Ca+P implanted samples with an estimated ionization level of 169 meV and a corresponding activation efficiency of {approximately}100{percent}. This is the first experimental report of an acceptor species in GaN, other than Mg, with an ionization energy level less than 180 meV. O-implanted GaN displays an ionization level of {approximately}29 meV but with an activation efficiency of only 3.6{percent} after a 1050{degree}C anneal that may result from insufficient vacancy generation for the lighter O ion or from the existence of a second, deeper O energy level. Neither Ca or O displayed measurable redistribution, based on secondary ion mass spectrometry measurements, even after a 1125{degree}C anneal. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 279718
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 68; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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