Thermal stability of {sup 2}H-implanted {ital n}- and {ital p}-type GaN
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Consultant, Stevenson Ranch, California 91381 (United States)
- Army Research Office, Research Triangle Park, Durham, North Carolina 27709 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Implantation of {sup 2}H{sup +} into {ital n}- and {ital p}-type GaN creates high resistivity material in which the resistance displays activation energies of 0.8 and 0.9 eV, respectively. Annealing at 500thinsp{degree}C restores the initial, preimplanted resistance of the n-GaN, due to removal of the deep trap states created by the ion stopping. By contrast, in {ital p}-type GaN annealing at 500thinsp{degree}C produces motion of the implanted deuterium and formation of Mg{endash}H complexes that keep the resistance high. About 20{percent} of the deuterium remains in n-GaN even after annealing at 1200thinsp{degree}C, where it decorates the residual implant damage. In {ital p}-type GaN all of the deuterium is evolved from the crystal by 1000thinsp{degree}C. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 659290
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 73; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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