Hydrogen-decorated lattice defects in proton implanted GaN

Journal Article · Tue Mar 31 23:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.121157· OSTI ID:624843

Weinstein, M G; Song, C Y; Stavola, M ^[1]; Pearton, S J ^[2]; Wilson, R G ^[3]; Shul, R J ^[4]; Killeen, K P; Ludowise, M J ^[5]

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1. Department of Physics, Lehigh University, Bethlehem, Pennsylvania18015 (United States)
2. Department of Materials Science, University of Florida, Gainesville, Florida32611 (United States)
3. Consultant, Winnetka, California92065 (United States)
4. Sandia National Laboratories, Albuquerque, New Mexico87185 (United States)
5. Hewlett--Packard Laboratories, Palo Alto, California94304 (United States)

Several vibrational bands were observed near 3100cm{sup {minus}1} in GaN that had been implanted with hydrogen at room temperature and subsequently annealed. Our results indicate that these bands are due to nitrogen-dangling-bond defects created by the implantation that are decorated by hydrogen. The frequencies are close to those predicted recently for V{sub Ga}{endash}H{sub n} complexes, leading us to tentatively assign the new lines to V{sub Ga} defects decorated with different numbers of H atoms. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 624843
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 72; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ANNEALING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
DEUTERONS
DOPED MATERIALS
GALLIUM NITRIDES
HYDROGEN COMPLEXES
ION IMPLANTATION
PROTONS
VIBRATIONAL STATES