Infrared and transmission electron microscopy studies of ion-implanted H in GaN
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
H and D have been implanted into undoped films of GaN heteroepitaxially grown on sapphire over a dose range from 5{times}10{sup 15} to 5{times}10{sup 17} ions/cm{sup 2}. After a 600{degree}C post-implantation anneal, room temperature Fourier-transform-infrared spectroscopy reveals two major local vibrational modes at 3183 cm{sup {minus}1} (2364 cm{sup {minus}1}) and 3219 cm{sup {minus}1} (2386 cm{sup {minus}1}) for the H (D) material implanted at higher doses. The position and isotope shift (1.35) of these modes strongly suggest they are due to hydrogen bonded to nitrogen atoms; these atoms are located on the surfaces of seven sided cavities created by the H implant and thermal anneal cycle and identified by transmission electron microscopy. Nuclear reaction analyses of isochronally annealed D implanted films indicate that most of the deuterium remains bound within the implanted layer, and that the major release stage for D occurs near 900{degree}C. By contrast, the N{endash}H (N{endash}D) vibrational modes anneal out in the 750{endash}800{degree}C temperature range. These findings indicate that the bound H exists in at least two major states, believed to be IR-active N{endash}H on the cavity walls and IR-inactive H{sub 2} gas within the cavities. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 324915
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 85; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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