Local vibrational modes of the Mg{endash}H acceptor complex in GaN
- Xerox Palo Alto Research Center, Palo Alto, California 94304 (United States)
- Lawrence Berkeley National Laboratory and the University of California at Berkeley, Berkeley, California 94720 (United States)
Local vibrational modes (LVMs) are reported for Mg-doped GaN grown by metalorganic chemical vapor deposition. Hetero-epitaxial layers of GaN:Mg, either as-grown, thermally activated, or deuterated, were investigated with low-temperature, Fourier-transform infrared absorption spectroscopy. The as-grown material, which was semi-insulating, exhibits a LVM at 3125 cm{sup {minus}1}. Thermal annealing increases the {ital p}-type conductivity, as established with Hall effect measurements, and proportionally reduces the intensity of this LVM. Deuteration of the activated material creates a LVM at 2321 cm{sup {minus}1}. The isotopic shift establishes the presence of hydrogen in the vibrating complex. The new LVMs are assigned to the stretch modes of the Mg{endash}H and Mg{endash}D complexes in GaN, with the vibrational frequencies indicative of a strong N{endash}H bond as recently proposed from total-energy calculations. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 397406
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 69; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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