Oxygen-related vibrational modes produced in Czochralski silicon by hydrogen plasma exposure
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Plasma hydrogenation of Czochralski Si has been performed to investigate the introduction of Si{endash}O stretch modes and their correlation with thermal donor formation. Plasma hydrogenation at 275{degree}C introduces a well-resolved vibrational absorption band at 1005 cm{sup {minus}1}, while absorption due to electronic excitations for thermal donors remains weak. We attribute this band to a Si{endash}O precursor center for thermal donor formation, and suggest it is the oxygen dimer center discussed in other studies of oxygen in Si. Vibrational modes introduced at 990 and 1000 cm{sup {minus}1} during post-hydrogenation furnace annealing at 400{degree}C correlate with thermal donors TD2 and TD3, respectively. Stretch frequencies for Si{endash}O in thermal donor centers are compared to those for oxygen aggregates in oxygen-implanted and electron-irradiated Si.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 278639
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 79; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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