Hydrogen introduction and hydrogen-enhanced thermal donor formation in silicon
- Department 1111, Ion Solid Interactions and Defect Physics, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Material Science and Engineering, Stanford University, Stanford, California 94305 (United States)
Hydrogen has been introduced from a rf plasma into Czochralski Si at 275 [degree]C. Most of the hydrogen is trapped near the surface where it forms Si---H bonds, but a small fraction diffuses into the Si. This fraction enhances oxygen-related thermal donor (TD) formation rates in a diffusionlike profile during subsequent furnace anneals between 350 and 400 [degree]C. A hydrogen concentration that is only a few percent of the oxygen concentration is sufficient to enhance the TD formation rate, indicative of a hydrogen-catalyzed process. Maximum concentrations for TDs after annealing at 400 [degree]C exceed that for retained hydrogen. A mechanism of hydrogen diffusion through oxygen traps and correlated hydrogen-promoted oxygen diffusion is proposed to explain the enhanced TD formation rates.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5157318
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 75:7; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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