Hydrogen-accelerated thermal donor formation in Czochralski silicon

Journal Article · Sun Dec 31 23:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102652· OSTI ID:6986061

Stein, H J ^[1]; Hahn, S K ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)
2. Siltec Corporation, Menlo Park, California 94025 (USA)

Acceleration of thermal donor formation at 400 {degree}C in Czochralski Si by a hydrogen plasma has been observed using low-temperature infrared absorption and spreading resistance probe measurements. The accelerated formation in as-grown Si is attributed to hydrogen diffusion and catalyzed conversion of electrically inactive nuclei to thermal donors. When the nuclei concentration is small such as in rapid thermal annealed Si, hydrogen interaction at SiO bonds is suggested as the rate-limiting step in thermal donor formation.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6986061
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:1; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360604* -- Materials-- Corrosion
Erosion
& Degradation
CRYSTAL GROWTH METHODS
CZOCHRALSKI METHOD
DIFFUSION
ELEMENTS
HIGH TEMPERATURE
HYDROGEN
IMPURITIES
NONMETALS
SEMIMETALS
SILICON