Study of oxygen complexes and hydrogen-related centers in silicon using electron paramagnetic resonance and Fourier transform infrared spectroscopy

Miscellaneous · Wed Jan 01 00:00:00 EST 1992

OSTI ID:7114670

Veloarisoa, I A

This dissertation presents a study of oxygen- and hydrogen-related complexes in silicon using electron paramagnetic resonance (EPR) and Fourier transform infrared (FTIR) spectroscopy. Results are described from the study of two oxygen complexes in silicon. Prolonged heat treatment of oxygen-rich silicon at temperatures around 450[degrees]C usually generates thermal donors (TD). The TDs in silicon formed during the early stage of growth-TD0, TD1 and TD2-display metastable properties. Investigation of the metastable property of TD1 and TD2 has been carried out to identify the atomic structure of the various configurations and the mechanism of interconversions of these metastable Tds. TD3 may also exhibit metastable properties. Si-G15 is also an oxygen-related defect observed in electron-irradiated silicon. This center consists of an interstitial carbon-interstitial oxygen pair. The local structure surrounding the oxygen atom has been examined by study of the [sup 17]O hyperfine interaction. This study confirms unambiguously that there is only one oxygen atom involved in the defect. The passivation of shallow impurities in semiconductors by exposure to a hydrogen plasma is usually performed at about 150[degrees]C where the hydrogen indiffusion depths are only a few microns. It has been demonstrated that bulk diffusion of hydrogen gas at high temperature and quenching has served to passivate lower concentrations of shallow acceptors throughout the bulk of a semiconductor sample. The boron-hydrogen complex in silicon has four crystallographically equivalent orientations whose ground state energies are altered by an applied stress. Alignment of the defect was detected by observing the polarization of the 1903 cm[sup [minus]1] infrared local mode vibrational absorption band at 77K allowing a determination of the piezospectroscopic tensor for its coupling to the stress.

• Research Organization: Lehigh Univ., Bethlehem, PA (United States)
• OSTI ID: 7114670
• Resource Relation: Other Information: Thesis (Ph.D.)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
SILICON
ELECTRON SPIN RESONANCE
IMPURITIES
INFRARED SPECTRA
FOURIER TRANSFORM SPECTROMETERS
HYDROGEN
OXYGEN COMPLEXES
PASSIVATION
COMPLEXES
ELEMENTS
MAGNETIC RESONANCE
MEASURING INSTRUMENTS
NONMETALS
RESONANCE
SEMIMETALS
SPECTRA
SPECTROMETERS
360602* - Other Materials- Structure & Phase Studies
400201 - Chemical & Physicochemical Properties