Elevated-temperature 3-MeV Si and 150-keV Ge implants in InP:Fe

Journal Article · Wed Jan 01 00:00:00 EST 1992 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.350742· OSTI ID:5589484

Rao, M V; Nadella, R K ^[1]; Holland, O W ^[2]

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1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
2. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Variable-fluence 3-MeV Si{sup +} and 150-keV Ge{sup +} implants were performed into InP:Fe at 200 {degree}C. Lattice damage in the material is greatly reduced over comparable room-temperature (RT) implantations and is rather insensitive to fluence for Si{sup +} implantation in the range of 8 {times} 10{sup 14}--5 {times} 10{sup 15} cm{sup {minus}2}, and no amorphization occurs. For 8 {times} 10{sup 14}-cm{sup {minus}2} Si{sup +} implantation at 200 {degree}C, the dopant activation is 82% and carrier mobility is 1200 cm{sup 2}/V s after 875 {degree}C/10-s annealing, whereas for the RT implantation the corresponding values are 48% and 765 cm{sup 2}/V s, respectively. The reasons for the improved mobility in the elevated-temperature implants were investigated using Rutherford-backscattering spectrometry. At a dose of 8 {times} 10{sup 14} cm{sup {minus}2}, the aligned yield after annealing is close to that of a virgin sample, indicating a low concentration of residual damage in the 200 {degree}C implant, whereas the lattice remained highly defective in the RT implanted sample. Elevated-temperature implantation of Si{sup +} and Pi{sup +} ions was also investigated. Coimplantation did yield an improvement in activation for an implanted fluence of 2 {times} 10{sup 15} cm{sup {minus}2} Si{sup +}, but resulted in an inferior lattice quality which degraded the carrier mobility compared to a Si{sup +} (only) implant. For a 1 {times} 10{sup 14}-cm{sup {minus}2} Ge{sup +} implant, the maximum dopant activation is 50% (donor) and the material did not turn {ital p} type even after 925 {degree}C annealing.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5589484
• Journal Information: Journal of Applied Physics; (United States), Vol. 71:1; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GERMANIUM IONS
COLLISIONS
INDIUM PHOSPHIDES
ION IMPLANTATION
SILICON IONS
ANNEALING
CARRIER MOBILITY
IRON ADDITIONS
KEV RANGE 100-1000
MEV RANGE 01-10
RUTHERFORD SCATTERING
TEMPERATURE RANGE 0273-0400 K
ALLOYS
CHARGED PARTICLES
ELASTIC SCATTERING
ENERGY RANGE
HEAT TREATMENTS
INDIUM COMPOUNDS
IONS
IRON ALLOYS
KEV RANGE
MEV RANGE
MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
TEMPERATURE RANGE
665300* - Interactions Between Beams & Condensed Matter- (1992-)