Elevated-temperature 3-MeV Si and 150-keV Ge implants in InP:Fe

Journal Article · Tue Dec 31 23:00:00 EST 1991 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.350742· OSTI ID:5589484

Rao, M V; Nadella, R K ^[1]; Holland, O W ^[2]

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1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
2. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Variable-fluence 3-MeV Si{sup +} and 150-keV Ge{sup +} implants were performed into InP:Fe at 200 {degree}C. Lattice damage in the material is greatly reduced over comparable room-temperature (RT) implantations and is rather insensitive to fluence for Si{sup +} implantation in the range of 8 {times} 10{sup 14}--5 {times} 10{sup 15} cm{sup {minus}2}, and no amorphization occurs. For 8 {times} 10{sup 14}-cm{sup {minus}2} Si{sup +} implantation at 200 {degree}C, the dopant activation is 82% and carrier mobility is 1200 cm{sup 2}/V s after 875 {degree}C/10-s annealing, whereas for the RT implantation the corresponding values are 48% and 765 cm{sup 2}/V s, respectively. The reasons for the improved mobility in the elevated-temperature implants were investigated using Rutherford-backscattering spectrometry. At a dose of 8 {times} 10{sup 14} cm{sup {minus}2}, the aligned yield after annealing is close to that of a virgin sample, indicating a low concentration of residual damage in the 200 {degree}C implant, whereas the lattice remained highly defective in the RT implanted sample. Elevated-temperature implantation of Si{sup +} and Pi{sup +} ions was also investigated. Coimplantation did yield an improvement in activation for an implanted fluence of 2 {times} 10{sup 15} cm{sup {minus}2} Si{sup +}, but resulted in an inferior lattice quality which degraded the carrier mobility compared to a Si{sup +} (only) implant. For a 1 {times} 10{sup 14}-cm{sup {minus}2} Ge{sup +} implant, the maximum dopant activation is 50% (donor) and the material did not turn {ital p} type even after 925 {degree}C annealing.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5589484
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 71:1; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ANNEALING
CARRIER MOBILITY
CHARGED PARTICLES
COLLISIONS
ELASTIC SCATTERING
ENERGY RANGE
GERMANIUM IONS
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
IRON ADDITIONS
IRON ALLOYS
KEV RANGE
KEV RANGE 100-1000
MEV RANGE
MEV RANGE 01-10
MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RUTHERFORD SCATTERING
SCATTERING
SILICON IONS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K