Carbon in GaAs: Implantation and isolation characteristics
Carbon was implanted into GaAs at doses between 10/sup 13/ and 5/times/10/sup 14/ cm/sup /minus/2/, either by itself or with Ga coimplantation at room temperature or 200 /degree/C. Activation percentages as high as 40% were obtained for C+Ga implants at 5/times/10/sup 14/ cm/sup /minus/2/ compared to /lt/3% for C implantation only. The peak activation occurs for an annealing temperature of 800 /degree/C for 10 s, while above this the net activation decreases, apparently due to site switching. The C shows fairly minimal redistribution during anneals up to 1000 /degree/C in contrast to other acceptor dopants in GaAs. The formation of highly resistive (/gt/10/sup 6/ /Omega//(spec. char. missing)) layers in C-doped (/ital p//similar to/2/times/10/sup 20/ cm/sup /minus/3/) GaAs is possible by using oxygen bombardment doses above 5/times/10/sup 14/ cm/sup /minus/2/. Under these conditions the evolution of the implanted layer resistivity with annealing temperature can be described by the usual trap-related compensation mechanism.
- Research Organization:
- AT T Bell Laboratories, Murray Hill, New Jersey 07974 (US)
- OSTI ID:
- 5832445
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:7; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ACTIVATION ENERGY
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
CARBON
CHARGED PARTICLES
CRYSTAL DOPING
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM IONS
HIGH TEMPERATURE
ION IMPLANTATION
IONS
MEDIUM TEMPERATURE
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
OXYGEN IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION TRANSPORT
TRAPS
VERY HIGH TEMPERATURE