Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects

Journal Article · Mon May 11 00:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.107004· OSTI ID:7115679

Moll, A J ^[1]; Yu, K M; Walukiewicz, W; Hansen, W L ^[2]; Haller, E E ^[1]

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1. Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, and Department of Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, California 94720 (United States)
2. Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless of the chemical nature of the coimplant. Maintaining stoichiometry by coimplanting a group III element further increased activation in substrates heavily damaged during implantation. Activation of 65{plus minus}3%, corresponding to a sheet free-carrier concentration of 3.5{times}10{sup 14} cm{sup {minus}2}, was achieved by coimplanting Ga and annealing at 950 {degree}C for 10 s.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7115679
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 60:19; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
360606* -- Other Materials-- Physical Properties-- (1992-)
ACTIVATION ANALYSIS
ALLOYS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CARBON ADDITIONS
CARRIER DENSITY
CHEMICAL ANALYSIS
CRYSTAL DOPING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
STOICHIOMETRY