The effect of coimplantation on the electrical activity of implanted carbon in GaAs

Journal Article · Tue Dec 14 23:00:00 EST 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.355027· OSTI ID:5721049

Moll, A J ^[1]; Ager, III, J W; Yu, K M; Walukiewicz, W ^[2]; Haller, E E ^[1]

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1. Center for Advanced Materials, Lawrence Berkeley Laboratory and Materials Science and Mineral Engineering Department, University of California at Berkeley, Berkeley, California 94720 (United States)
2. Center for Advanced Materials, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

The effects of radiation damage and stoichiometry on the electrical activity of carbon implanted in GaAs are studied. Damage due to implantation of an ion heavier than C increases the number of C atoms which substitute for As (C[sub As]). Creation of an amorphous layer by implantation and the subsequent solid phase epitaxy during annealing further enhances the concentration of C[sub As]. However, the free carrier concentration does not increase linearly with increasing concentration of C[sub As] due to compensating defects. Activation of implanted C is maximized by maintaining the stoichiometry of the substrate which reduces the number of compensating defects in the crystal. Under optimum conditions for carbon implanted at a dose of 5[times]10[sup 14] cm[sup [minus]2], the carbon acceptor activity can be increased from 2% to 65% of the total implanted carbon.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5721049
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 74:12; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
AMORPHOUS STATE
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CARBON IONS
CHARGE CARRIERS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
LAYERS
PNICTIDES