Coimplantation of carbon implanted GaAs: Energy and dose rate observations

Journal Article · Mon Feb 27 04:00:00 EST 1995 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.113836· OSTI ID:6493682

Morton, R; Zhu, B; Lau, S S ^[1]; Poker, D B ^[2]

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1. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States)
2. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Coimplantations of carbon implanted GaAs at doses of [ital mtsp];5[times]10[sup 13] and [ital mtsp];5[times]10[sup 14] cm[sup [minus]2] were performed at room temperature using argon, gallium, arsenic, and krypton ions with varying beam intensity. The electrical activation of carbon implanted gallium arsenide as a function of coimplanted dose, energy, and dose rate has been studied. For moderate carbon and coimplant doses of [ital mtsp];5[times]10[sup 13] cm[sup [minus]2] increasing the dose rate of the coimplant improved the carbon activation, while at high carbon and coimplant doses of [ital mtsp];5[times]10[sup 14] cm[sup [minus]2] the opposite trend was observed. The dose rate effects were found to be similar in magnitude as the well-known stoichiometric effects for coimplantation. This study illustrates the importance of damage production and placement for carbon activation.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6493682
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 66:9; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
360606 -- Other Materials-- Physical Properties-- (1992-)
ACTIVATION ENERGY
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CARBON ADDITIONS
CRYSTAL DOPING
ELECTRICAL PROPERTIES
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
PHYSICAL PROPERTIES
PNICTIDES