Thermally stable oxygen implant isolation of [ital p]-type Al[sub 0. 2]Ga[sub 0. 8]As

Journal Article · Mon May 17 04:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.109288· OSTI ID:6784806

Zolper, J C; Baca, A G; Chalmers, S A ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

High dose oxygen implantation was used to form high resistivity regions in [ital p]-type Al[sub 0.2]Ga[sub 0.8]As. By achieving oxygen concentrations 30 times the grown-in beryllium concentration we created Al[sub 0.2]Ga[sub 0.8]As layers with a sheet resistance of over 10[sup 10] [Omega]/(spec. char. missing) that were stable to 900 [degree]C. Samples implanted with a base dose of 2[times]10[sup 14] cm[sup [minus]2] showed an apparent activation energy for conduction of 0.67 eV after annealing at 800 [degree]C.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6784806
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:20; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
360606* -- Other Materials-- Physical Properties-- (1992-)
ACTIVATION ENERGY
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM ADDITIONS
BERYLLIUM ALLOYS
CHEMICAL REACTIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
MATERIALS
OXIDATION
P-TYPE CONDUCTORS
PASSIVATION
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS