Formation of high resistivity regions in [ital p]-type Al[sub 0. 5]In[sub 0. 5]P by ion implantation

Journal Article · Mon Dec 06 04:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110235· OSTI ID:5740671

Zolper, J C; Schneider, Jr, R P; Lott, J A ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

Ion implantation has been applied to magnesium-doped Al[sub 0.5]In[sub 0.5]P to produce high resistivity regions for the first time. Hydrogen, oxygen, and argon ions were implanted at a base dose ranging from 5[times]10[sup 12] to 5[times]10[sup 14] cm[sup [minus]2] and annealed from 400 to 900 [degree]C. Hydrogen did not appreciably compensate the In[sub 0.5]Al[sub 0.5]P layer while oxygen and argon produced sheet resistances up to 1[times]10[sup 9] [Omega]/[open square]. After annealing at 800 [degree]C, regions with high dose oxygen implants maintained a sheet resistance above 1[times]10[sup 7] [Omega]/[open square], while regions with high dose argon implants recovered most of the unimplanted conductivity.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5740671
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:23; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
ANNEALING
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
MAGNESIUM ADDITIONS
MAGNESIUM ALLOYS
MATERIALS
P-TYPE CONDUCTORS
PASSIVATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS