0. 4--3. 0-MeV-range Be-ion implantations into InP:Fe
- Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia (USA)
- National Institute of Standards and Technology, Gaithersburg, Maryland (USA)
High-energy (MeV) Be implants in the energy range 0.4--3.0 MeV and dose range 2{times}10{sup 13}--6{times}10{sup 14} cm{sup {minus}2} were performed in InP:Fe. Phosphorus coimplantation was used at all Be implant energies and doses to minimize Be redistribution during annealing. For comparison, the Be implant alone was also performed at 1 MeV for a dose of 2{times}10{sup 14} cm{sup {minus}2}. The first four moments of the Be implant depth distributions were calculated from the secondary-ion-mass spectrometry (SIMS) data on the as-implanted samples. Variable temperature/time rapid thermal annealing (RTA) cycles were used to activate the Be implant. A maximum of 94% activation was obtained for 875 {degree}C/15-s RTA on the 2-MeV/2{times}10{sup 14}-cm{sup {minus}2} Be implant. In contrast to Be-implanted samples, no in-diffusion of Be was observed in Be/P-coimplanted samples. For the annealed samples, two additional Be peaks located at 0.8{ital R}{sub {ital p}} and 0.9{ital R}{sub {ital p}} (range) were observed in the SIMS depth profiles.
- OSTI ID:
- 5183397
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:6; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ANNEALING
BEAMS
BERYLLIUM ADDITIONS
BERYLLIUM ALLOYS
CRYSTALS
DOPED MATERIALS
ENERGY RANGE
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION BEAMS
ION IMPLANTATION
IRON ADDITIONS
IRON ALLOYS
KEV RANGE
KEV RANGE 01-10
KEV RANGE 100-1000
MATERIALS
MEDIUM TEMPERATURE
MONOCRYSTALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES