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0. 4--3. 0-MeV-range Be-ion implantations into InP:Fe

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.349324· OSTI ID:5183397
;  [1]; ;  [2]
  1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia (USA)
  2. National Institute of Standards and Technology, Gaithersburg, Maryland (USA)

High-energy (MeV) Be implants in the energy range 0.4--3.0 MeV and dose range 2{times}10{sup 13}--6{times}10{sup 14} cm{sup {minus}2} were performed in InP:Fe. Phosphorus coimplantation was used at all Be implant energies and doses to minimize Be redistribution during annealing. For comparison, the Be implant alone was also performed at 1 MeV for a dose of 2{times}10{sup 14} cm{sup {minus}2}. The first four moments of the Be implant depth distributions were calculated from the secondary-ion-mass spectrometry (SIMS) data on the as-implanted samples. Variable temperature/time rapid thermal annealing (RTA) cycles were used to activate the Be implant. A maximum of 94% activation was obtained for 875 {degree}C/15-s RTA on the 2-MeV/2{times}10{sup 14}-cm{sup {minus}2} Be implant. In contrast to Be-implanted samples, no in-diffusion of Be was observed in Be/P-coimplanted samples. For the annealed samples, two additional Be peaks located at 0.8{ital R}{sub {ital p}} and 0.9{ital R}{sub {ital p}} (range) were observed in the SIMS depth profiles.

OSTI ID:
5183397
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:6; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English