Annealing temperature effects on the structure of ferromagnetic Mn-implanted Si

Journal Article · Sat Jul 15 04:00:00 EDT 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2194921· OSTI ID:20777345

Bolduc, M; Awo-Affouda, C; Ramos, F; LaBella, V P ^[1]

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1. College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States)

The dependence of the magnetization of Mn-implanted Si on the postimplant annealing temperature is studied. p-type Si wafers were implanted with 300 keV Mn{sup +} ions at 350 deg. C to a fluence of 1x10{sup 16} cm{sup -2} and then annealed at 500-900 deg. C for 5 min. Ferromagnetic hysteresis loops were obtained at 10 K using a superconducting quantum interference device magnetometer. The saturation magnetization increases with the postimplant annealing temperature, reaching an optimum field strength of 0.2 emu/g at 800 deg. C. An out diffusion of Mn is observed at higher temperatures that coincides with a decrease in the saturation magnetization. The calculated point-defect profile that was generated by the implantation process peaks around the Mn-depleted region, suggesting that the residual implant damage may play a role in the ferromagnetic behavior of Mn-implanted Si.

• OSTI ID: 20777345
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 4 Vol. 24; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DAMAGE
FERROMAGNETIC MATERIALS
HYSTERESIS
MAGNETIZATION
MAGNETOMETERS
MANGANESE IONS
PEAKS
POINT DEFECTS
SATURATION
SEMICONDUCTOR MATERIALS
SILICON
SQUID DEVICES
TEMPERATURE DEPENDENCE