High-fluence Si-implanted diamond: Optimum implantation temperature for SiC formation

Journal Article · Mon Aug 15 04:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2009073· OSTI ID:20714054

Weishart, H; Eichhorn, F; Heera, V; Pecz, B; Barna, A; Skorupa, W ^[1]

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1. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany)

In this paper the authors investigate the effect of implantation temperature on the structural properties of diamond implanted with high fluences of Si between 5.3x10{sup 17} Si cm{sup -2} and 1x10{sup 18} Si cm{sup -2}. In order to reduce radiation-induced damage and to enhance SiC formation the implantations were performed at elevated temperatures in the range from 900 to 1200 deg. C. Subsequently, all samples were annealed for 10 min at 1500 deg. C in a rf-heated furnace. X-ray diffraction revealed the formation of cubic SiC nanocrystallites in a buried layer inside the implanted diamond. The implantation-induced damage was assessed by analyzing graphitization of the surface-near layer using Raman spectroscopy. With increasing Si fluence the implantation-induced damage rises and the nearly perfect alignment of the formed SiC crystallites within the host diamond lattice deteriorates. However, raising the implantation temperature from 900 to 1000 deg. C reduces the damage in the diamond and increases the amount, size, and epitaxial alignment of the crystalline SiC precipitates. Further increase of the implantation temperature gives no improvement in the quality of the SiC-rich layer. Instead, the damaged diamond converts into graphite and the formation of SiC crystallites is obstructed.

• OSTI ID: 20714054
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 98; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DAMAGE
DIAMONDS
EPITAXY
FURNACES
GRAPHITE
GRAPHITIZATION
ION IMPLANTATION
LAYERS
NANOSTRUCTURES
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
X-RAY DIFFRACTION