Ion implantation in [beta]-SiC layers grown on (100)Si

Journal Article · Thu Dec 01 04:00:00 EST 1994 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2059358· OSTI ID:6871890

Hirano, Yasuaki; Inada, Taroh ^[1]

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1. Hosei Univ., Tokyo (Japan). Dept. of Electronics and Electrical Engineering

N[sub 2][sup +] and As[sup +] ions have been implanted in [beta]-SiC/Si wafers to form n-type layers in the substrates. Postimplant annealing was carried out at a temperature in the range of 400 to 1,200 C. The crystalline properties for implanted [beta]-SiC layers have been examined by an electron diffraction method and also by Rutherford backscattering spectroscopy. The electrical properties of n-type layers formed in the SiC have been evaluated by Hall-effect measurements. The experimental results obtained from the present work show that the recrystallization of the implantation-induced amorphous layer and the electrical activation of implanted atoms are initiated by annealing of 800 C. It is also shown that hot implantation is more effective for achieving the high electrical activation of implanted atoms as compared with room temperature implantation. A highly doped n-type [beta]-SiC layer can be formed by N-implantation at 400 C and by subsequent annealing at 1,200 C.

• OSTI ID: 6871890
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 141:12; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
ANNEALING
ARSENIC
CARBIDES
CARBON COMPOUNDS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
NITROGEN
NONMETALS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON CARBIDES
SILICON COMPOUNDS