Structural characterization of ion implanted beta-SiC thin films
Conference
·
OSTI ID:6016476
Thin films of ..beta..-SiC (100) grown on Si have been implanted with Al, P, Si and Si plus C. The temperature dependence of implantation-induced damage was studied between 77K and 1023K using transmission electron microscopy and Rutherford backscattering/channeling. Amorphous layers resulting from implantation of any of the above species recrystallized via solid-phase-epitaxy during post-implantation annealing between 1973K and 2073K. As such, this latter process necessitated the prior removal of the Si substrate. However, the resultant layers were very defective. Increasing the sample temperature to 1023K during implantation allowed in situ dynamic annealing of the samples and therefore, greatly reduced the residual damage to the lattice. No additional annealing was required for structural recovery.
- Research Organization:
- North Carolina State Univ., Raleigh (USA). Dept. of Materials Science and Engineering; Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6016476
- Report Number(s):
- CONF-8708151-1; ON: DE87014567
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ion implantation in [beta]-SiC layers grown on (100)Si
Structural characterization of damage in Si(100) produced by MeV Si sup + ion implantation and annealing
Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium
Journal Article
·
Wed Nov 30 23:00:00 EST 1994
· Journal of the Electrochemical Society; (United States)
·
OSTI ID:6871890
Structural characterization of damage in Si(100) produced by MeV Si sup + ion implantation and annealing
Journal Article
·
Wed Jan 31 23:00:00 EST 1990
· Journal of Materials Research; (USA)
·
OSTI ID:6860411
Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium
Journal Article
·
Mon Nov 05 23:00:00 EST 2012
· AIP Conference Proceedings
·
OSTI ID:22075710
Related Subjects
36 MATERIALS SCIENCE
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ALUMINIUM
AMORPHOUS STATE
ANNEALING
CARBIDES
CARBON
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DAMAGE
DEPOSITION
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
FILMS
HEAT TREATMENTS
IMPURITIES
ION IMPLANTATION
MATERIALS
METALS
MICROSCOPY
NONMETALS
PHOSPHORUS
RUTHERFORD SCATTERING
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SUBSTRATES
SURFACE COATING
TEMPERATURE EFFECTS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ALUMINIUM
AMORPHOUS STATE
ANNEALING
CARBIDES
CARBON
CARBON COMPOUNDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DOPING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DAMAGE
DEPOSITION
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
FILMS
HEAT TREATMENTS
IMPURITIES
ION IMPLANTATION
MATERIALS
METALS
MICROSCOPY
NONMETALS
PHOSPHORUS
RUTHERFORD SCATTERING
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SUBSTRATES
SURFACE COATING
TEMPERATURE EFFECTS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE