Structural characterization of damage in Si(100) produced by MeV Si sup + ion implantation and annealing

Journal Article · Thu Feb 01 04:00:00 EST 1990 · Journal of Materials Research; (USA)

DOI:https://doi.org/10.1557/JMR.1990.0352· OSTI ID:6860411

El-Ghor, M K; Holland, O W; White, C W; Pennycook, S J ^[1]

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1. Oak Ridge National Laboratory, Solid State Division, Oak Ridge, Tennessee 37831 (USA)

Buried amorphous layers were produced by implantation of MeV Si{sup +} ions in silicon single crystal at room temperature and liquid nitrogen temperature. The damage is characterized structurally both in the as-implanted condition and after post-implantation furnace annealing. Growth of the amorphous layer during room temperature implantation is found to occur by a layer-by-layer mechanism with relatively sharp interfacial transition regions. A wide region ahead of the buried amorphous region extending to the surface is observed to be free of any extended defects. Recrystallization of the damaged region during thermal annealing occurs by solid-phase epitaxial growth at both interfaces. A lower growth velocity is found at the upper interface, which is attributed to a higher hairpin dislocation density grown-in at this interface. Results of irradiation at liquid nitrogen temperature, on the other hand, show that nucleation and growth of the amorphous damage occurs over a wide region and is not confined to the interfacial region. This results in a very diffuse upper interface composed of a mixture of amorphous and crystalline phases. Substantial reordering is observed in this mixed-phase region after 400 {degree}C annealing, even though this temperature is too low for normal interfacial solid-phase epitaxial growth. Cross-sectional transmission electron microscopy, as well as Rutherford backscattering spectroscopy, were used in this study.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6860411
• Journal Information: Journal of Materials Research; (USA), Journal Name: Journal of Materials Research; (USA) Vol. 5:2; ISSN JMREE; ISSN 0884-2914
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
CATIONS
CHARGED PARTICLES
CRYSTALS
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
EVEN-EVEN NUCLEI
HEAT TREATMENTS
INTERFACES
ION IMPLANTATION
IONS
ISOTOPES
LAYERS
LIGHT NUCLEI
LOW TEMPERATURE
MEDIUM TEMPERATURE
MEV RANGE
MEV RANGE 01-10
MICROSCOPY
MONOCRYSTALS
NUCLEI
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECRYSTALLIZATION
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON
SILICON 28
SILICON IONS
SILICON ISOTOPES
STABLE ISOTOPES
TRANSMISSION ELECTRON MICROSCOPY