Ion implantation processing of GaN epitaxial layers
Book
·
OSTI ID:417641
- Australian National Univ., Canberra (Australia)
- Univ. of Sydney, New South Wales (Australia)
- Univ. of Florida, Gainesville, FL (United States)
- Emcore Corp., Somerset, NJ (United States)
Ion implantation induced-damage build up in epitaxial GaN layers grown on sapphire has been analyzed by ion channeling and electron microscopy techniques. The epitaxial layers are extremely resistant to ion beam damage in that substantial dynamic annealing of implantation disorder occurs even at liquid nitrogen temperatures. Amorphous layers can be formed in some cases if the implantation dose is high enough. However, the damage (amorphous or complex extended defects) that is formed is also extremely difficult to remove during annealing and required temperatures in excess of 1,100 C.
- OSTI ID:
- 417641
- Report Number(s):
- CONF-960502--; ISBN 1-56677-163-3
- Country of Publication:
- United States
- Language:
- English
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