Low temperature epitaxial growth of AlN and GaN thin films by the method of ion beam assisted deposition
- Pohang Univ. of Science and Technology (Korea, Republic of). Dept. of Materials Science and Engineering
The epitaxial layers of AlN and GaN were grown on Si and Sapphire substrate at a relatively low temperature of around 500 C using the process of reactive ion beam assisted deposition. The optimum ion beam energy for epitaxial growth of AlN and GaN films was found to be about 50 eV. Characterization of the epitaxial layers was carried out by GID (Grazing-Incidence x-ray Diffraction) and high resolution TEM observation. The orientational relations between epitaxial layer and substrate were determined through these analysis. Very thin amorphous layers were observed at the interfaces of both AlN and GaN films grown on Si(111) substrate, whereas the films grown on Sapphire substrate has no amorphous layer. The amorphous layer may act as a buffer layer enabling the growth of the epitaxial layers of AlN and GaN by relaxing the misfit strain in the early growing stage.
- OSTI ID:
- 394969
- Report Number(s):
- CONF-951155-; ISBN 1-55899-298-7; TRN: IM9648%%46
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy
InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition.
Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
ALUMINIUM NITRIDES
ENERGY BEAM DEPOSITION
CRYSTAL STRUCTURE
GALLIUM NITRIDES
ELECTRONIC EQUIPMENT
SEMICONDUCTOR MATERIALS
SILICON
SAPPHIRE
X-RAY DIFFRACTION
TRANSMISSION ELECTRON MICROSCOPY
PHOTOELECTRON SPECTROSCOPY
AUGER ELECTRON SPECTROSCOPY
ELECTRON DIFFRACTION
CRYSTAL LATTICES
ORIENTATION
AMORPHOUS STATE
INTERFACES
EXPERIMENTAL DATA