Low temperature epitaxial growth of AlN and GaN thin films by the method of ion beam assisted deposition
- Pohang Univ. of Science and Technology (Korea, Republic of). Dept. of Materials Science and Engineering
The epitaxial layers of AlN and GaN were grown on Si and Sapphire substrate at a relatively low temperature of around 500 C using the process of reactive ion beam assisted deposition. The optimum ion beam energy for epitaxial growth of AlN and GaN films was found to be about 50 eV. Characterization of the epitaxial layers was carried out by GID (Grazing-Incidence x-ray Diffraction) and high resolution TEM observation. The orientational relations between epitaxial layer and substrate were determined through these analysis. Very thin amorphous layers were observed at the interfaces of both AlN and GaN films grown on Si(111) substrate, whereas the films grown on Sapphire substrate has no amorphous layer. The amorphous layer may act as a buffer layer enabling the growth of the epitaxial layers of AlN and GaN by relaxing the misfit strain in the early growing stage.
- OSTI ID:
- 394969
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
ALUMINIUM NITRIDES
AMORPHOUS STATE
AUGER ELECTRON SPECTROSCOPY
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
ELECTRONIC EQUIPMENT
ENERGY BEAM DEPOSITION
EXPERIMENTAL DATA
GALLIUM NITRIDES
INTERFACES
ORIENTATION
PHOTOELECTRON SPECTROSCOPY
SAPPHIRE
SEMICONDUCTOR MATERIALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION