Ion damage and annealing of epitaxial gallium nitride and comparison with GaAs/AlGaAs materials

Book · Thu Oct 31 23:00:00 EST 1996

OSTI ID:395035

Tan, H H; Williams, J S ^[1]; Yuan, C ^[2]; Pearton, S J ^[3]

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1. Australian National Univ., Canberra (Australia). Dept. of Electronic Materials Engineering
2. Emcore Corp., Somerset, NJ (United States)
3. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering

Ion damage build up has been measured by ion channeling in good quality epitaxial GaN films on sapphire. GaN is found to be remarkably resistant to ion damage, with extremely efficient dynamic defect annihilation occurring at liquid nitrogen temperature during ion implantation. When disorder does accumulate at doses around 10{sup 16} cm{sup {minus}2} of 90 keV Si ions, the surface appears to be a strong sink for damage build up and possibly the nucleation of amorphous layers. Once ion disorder has been produced in GaN, it is extremely difficult to remove by annealing. GaN exhibits disordering and annealing behavior which is somewhat similar to that in high Al-content AlGaAs.

• OSTI ID: 395035
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM ARSENIDES
ANNEALING
CHEMICAL VAPOR DEPOSITION
CORRELATIONS
DAMAGE
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM NITRIDES
HELIUM IONS
ION CHANNELING
ION IMPLANTATION
SAPPHIRE
SEMICONDUCTOR MATERIALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY