Ion Implantation and Thermal Annealing in Silicon Carbide and Gallium Nitride

Journal Article · Mon Jun 04 04:00:00 EDT 2001 · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 178(204-208

DOI:https://doi.org/10.1016/S0168-583X(00)00451-1· OSTI ID:15007511

Jiang, Weilin; Weber, William J; Thevuthasan, Suntharampillai

Ion-beam-induced disordering in single crystals of 6H-SiC and single-crystal films of GaN has been investigated using ion-channeling methods. Amorphization in GaN requires a dose that is about 30 and 100 times higher than in SiC at 180 and 300 K, respectively. Dynamic defect-recovery processes in both materials increase with increasing irradiation temperature. Amorphization in SiC is consistent with a combined direct-impact and defect-stimulated process. Three recovery stages are observed on both the Si and C sublattices under isochronal annealing in Au-irradiated 6H-SiC. In GaN, an intermediate saturation state is observed for disordering at the damage peak, which suggests enhanced defect annihilation processes. Implanted Au diffuses towards the surface during implantation at 300 K and undergoes further diffusion into the amorphous surface layer during post-implantation annealing at 870 K.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC06-76RL01830
• OSTI ID: 15007511
• Report Number(s): PNNL-SA-33338; KC0201020
• Journal Information: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 178(204-208, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, 178(204-208
• Country of Publication: United States
• Language: English

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36 MATERIALS SCIENCE