Channeling Study of Lattice Disorder and Gold Implants in Gallium Nitride
- BATTELLE (PACIFIC NW LAB)
Irradiation experiments have been performed 60? off normal for a GaN single crystal film at 300 K using 3 MeV Au3+ ions over fluences ranging from 0.88 to 86.2 ions/nm2. The accumulation of disorder on both the Ga and N sublattices has been simultaneously investigated using 3.8 MeV He+ non-Rutherford backscattering spectrometry along the <0001> and <101> axial channeling directions. The accumulated disorder at the damage peak increases with dose below 10 dpa, and saturates at a relative level of {approx}0.7 between 10 and 60 dpa. Complete amorphization starts at the surface and grows into the damage peak regime. A higher rate of disordering on the N sublattice is observed at low damage levels, which suggests a lower threshold displacement energy on the N sublattice in GaN. Isochronal annealing (20 min) at temperatures up to 1000 K has been used to follow the thermal response of the Ga disorder and Au implants. Some disorder recovery occurs at the intermediate dose s. A fraction of Au occupancy on the Ga lattice site is observed in the as-implanted GaN, and the substitutional fraction of the implanted Au increases with increasing temperature.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15001295
- Report Number(s):
- PNNL-SA-35152; KC0201020
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms Journal Issue: 1-4 Vol. 191
- Country of Publication:
- United States
- Language:
- English
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