Effect of irradiation temperature on dynamic recovery in gallium nitride

Journal Article · Sat Dec 31 23:00:00 EST 2005 · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/j.nimb.2005.08.163· OSTI ID:877569

Jiang, Weilin; Weber, William J

A single crystal gallium nitride film on sapphire was successively irradiated to a fluence of 4.5 Au3+/nm2 in different areas at varied temperatures ranging from 150 to 800 K. The temperature dependence of disorder on both the Ga and N sublattices has been investigated using a 3.736 MeV He+ backscattering analysis along the <0001>- and <10-11>-axial channeling directions. Significant dynamic recovery of disorder occurs over the applied temperature range. There is a higher degree of disorder on the N sublattice observed along the <10-11> axis. Some of the defects produced during the irradiation in GaN are effectively shielded by the <0001> axis.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 877569
• Report Number(s): PNNL-SA-42525; 3448; KC0201020
• Journal Information: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms Journal Issue: 1-2 Vol. 242
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
Environmental Molecular Sciences Laboratory
GALLIUM NITRIDES
GOLD IONS
GaN
IRRADIATION
Ion irradiation
RADIATION EFFECTS
REPAIR
TEMPERATURE DEPENDENCE
dynamic recovery
multiaxial channeling