Experimental Studies of Defects, Implants and their Processes in Ion-Irradiated Gallium Nitride Single Crystals
This article reviews recent experimental results, obtained by the authors, on disorder accumulation, disorder recovery, and behavior of implanted species in ion-irradiated gallium nitride (GaN) single crystals. The disorder on both the Ga and N sublattices has been studied in situ using Rutherford backscattering spectrometry (RBS) and nuclear resonant scattering along the <0001> axis, while the damage states for as-irradiated and post-annealed specimens have been examined using transmission electron microscopy. The disorder accumulation has been investigated as a function of ion fluence, ion mass and irradiation temperature; disorder annealing has been studied under thermal and dynamic conditions. The behavior of gold implants in GaN during irradiation and thermal annealing also will be discussed.
- Research Organization:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 907943
- Report Number(s):
- PNNL-SA-40861; 3448; KC0201020
- Country of Publication:
- United States
- Language:
- English
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