Annealing of ion implanted gallium nitride
- Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT0200 (Australia)
- Electron Microscope Unit and Australian Key Centre for Microscopy and Microanalysis, The University of Sydney, Sydney, New South Wales 2006 (Australia)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
- EMCORE, Corporation, Somerset, New Jersey 08873 (United States)
In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that amorphous layers, which can result from high-dose implantation, recrystallize between 800 and 1100{degree}C to very defective polycrystalline material. Lower-dose implants (down to 5{times}10{sup 13}cm{sup {minus}2}), which are not amorphous but defective after implantation, also anneal poorly up to 1100{degree}C, leaving a coarse network of extended defects. Despite such disorder, a high fraction of Te is found to be substitutional in GaN both following implantation and after annealing. Furthermore, although elevated-temperature implants result in less disorder after implantation, this damage is also impossible to anneal out completely by 1100{degree}C. The implications of this study are that considerably higher annealing temperatures will be needed to remove damage for optimum electrical properties. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 580305
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 72; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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