Pulsed irradiation of optimized, MBE grown, AlGaAs/GaAs radiation hardened photodiodes. Rev
An AlGaAs/GaAs double heterojunction, mesa isolated, photodiode grown by molecular beam epitaxy was irradiated with 18 MeV electrons, 1 to 10 MeV x-rays, and neutrons from a pulsed reactor. Test results indicate that the AlGaAs/GaAs photodiodes generate approximately 10 to 20 times less photocurrent during exposure to a pulse of ionizing-radiation than radiation hardened silicon PIN photodiodes. Studies of neutron induced permanent damage in the AlGaAs/GaAs photodiode show only small changes in optical responsivity and a factor of 8 increase in leakage currents after exposure to 3.6 x 10/sup 15/ neutrons/cm/sup 2/ and 900 krad gamma. The silicon PIN photodiode was exposed to only 28% of the fluence used on the AlGaAs photodiodes and we observed a 40% decrease in optical responsivity and a factor of 7000 increase in leakage current.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6673008
- Report Number(s):
- CONF-840712-2-Rev.; ON: DE84014984
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
HARDENING
IONIZING RADIATIONS
LEAKAGE CURRENT
LEPTON BEAMS
MOLECULAR BEAM EPITAXY
NEUTRON BEAMS
NUCLEON BEAMS
PARTICLE BEAMS
PHOTOCURRENTS
PHOTODIODES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
TESTING
X RADIATION