Irradiation of optimized, MBE grown, AlGaAs/GaAs radiation hardened photodiode

Conference · Thu Mar 01 04:00:00 EST 1984

OSTI ID:6828438

Wiczer, J J; Fischer, T A; Dawson, L R; Osbourn, G C; Zipperian, T E; Barnes, C E

An AlGaAs/GaAs double heterojunction photodiode structure designed to be less susceptible to the disrupting effects of ionizing-radiation pulses was fabricated and tested. We report here an optimized structure, fabricated with the molecular beam epitaxy process for improved electrical and optical properties. We also report additional pulsed ionzing-radiation testing, including: irradiations with an 18 MeV electron beam from a linear accelerator, exposures to 1 to 10 MeV x-ray from the Hermes machine, and simultaneous neutron and gamma exposure from the SPR-III pulsed reactor.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6828438
• Report Number(s): SAND-84-0525C; CONF-840712-2; ON: DE84008034
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
BEAMS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELEMENTARY PARTICLES
EPITAXY
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
HADRONS
HARDENING
HETEROJUNCTIONS
IONIZING RADIATIONS
IRRADIATION
JUNCTIONS
LEPTON BEAMS
MOLECULAR BEAM EPITAXY
NEUTRONS
NUCLEONS
OPTIMIZATION
PARTICLE BEAMS
PHOTODIODES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
X RADIATION