AlGaAs/Ga/As radiation hardened photodiodes

Conference · Sat Dec 31 23:00:00 EST 1983

OSTI ID:6544950

Wiczer, J J; Barnes, C E; Fischer, T A; Dawson, L R; Zipperian, T E

We report on AlGaAs/GaAs double heterojunction photodiodes designed and fabricated to be resistant to the effects of ionizing-radiation. The work described here includes new results comparing optimized, AlGaAs/GaAs photodiodes grown with two different growth processes: liquid phase epitaxy and molecular beam epitaxy. These devices were processed with similar photolithographic masks and exposed to high energy neutrons, electrons, and photons. Electrical and optical characterizations were completed before and after each irradiation; degradation trends are reported. 10 references.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6544950
• Report Number(s): SAND-84-0679C; CONF-840872-22; ON: DE84016621
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
EPITAXY
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
HADRONS
HARDENING
HETEROJUNCTIONS
IONIZING RADIATIONS
JUNCTIONS
LEAKAGE CURRENT
LIQUID PHASE EPITAXY
MOLECULAR BEAM EPITAXY
NEUTRONS
NUCLEONS
PHOTOCURRENTS
PHOTODIODES
PHYSICAL RADIATION EFFECTS
PNICTIDES
QUANTUM EFFICIENCY
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
TESTING