Pulsed irradiation of optimized, MBE grown, AlGaAs/GaAs radiation hardened photodiodes
An AlGaAs/GaAs double heterojunction, mesa isolated, photodiode grown by molecular beam epitaxy was irradiated with 18 MeV electrons, 1 - 10 MeV x-rays, and neutrons from a pulsed reactor. Test results indicate that the AlGaAs/GaAs photodiodes generate approximately 10 - 20 times less photocurrent during exposure to a pulse of ionizing-radiation than radiation hardened silicon PIN photodiodes. Studies of neutron induced permanent damage in the AlGaAs/GaAs photodiode show only small changes in optical responsivity and a factor of 8 increase in leakage currents after exposure to 3.6 x 10/sup 15/ n/cm/sup 2/ and 900 krad gamma. The silicon PIN photodiode was exposed to only 28% of the fluence used on the AlGaAs photodiodes and we observed a 40% decrease in optical responsivity and a factor of 7000 increase in leakage current.
- Research Organization:
- Sandia National Laboratories, Albuquerque, NM 87185
- OSTI ID:
- 5698511
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Vol. NS-31:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
PHOTODIODES
DAMAGING NEUTRON FLUENCE
PULSED IRRADIATION
ALUMINIUM ARSENIDES
ELECTRONS
HETEROJUNCTIONS
IONIZING RADIATIONS
MEV RANGE 01-10
MEV RANGE 10-100
MOLECULAR BEAM EPITAXY
NEUTRONS
OPTIMIZATION
PHOTOCURRENTS
PULSED REACTORS
RADIATION HARDENING
SILICON
X RADIATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
EPITAXY
FERMIONS
HADRONS
HARDENING
IRRADIATION
JUNCTIONS
LEPTONS
MEV RANGE
NEUTRON FLUENCE
NUCLEONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
REACTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems