Summary of recent studies on AlGaAs/GaAs radiation hardened photodiodes

Conference · Tue Jan 01 04:00:00 EST 1985

OSTI ID:5892059

Wiczer, J J

In this paper, we summarize the results of several studies assessing the radiation hardness of a new type of double heterojunction, AlGaAs/GaAs photodiode. These studies include transient and permanent damage experiments. Transient studies indicate that double heterostructure AlGaAs/GaAs photodiodes generate 40 times less photocurrent than conventional silicon photodiodes during exposure to ionizing-radiation pulses. Permanent damage studies with neutrons, Co/sup 60/ gamma rays, and high energy electron beam sources indicate only minor changes in operational characteristics after exposures. These studies have shown a 20% degradation in optical response and a factor of 8 increase in photodiode leakage current after exposure to 3.6 x 10/sup 15/ neutron/cm/sup 2/ fluence. Conventional silicon photodiodes exhibit this type of degradation after exposures to 10/sup 12/ to 10/sup 13/ neutrons/cm/sup 2/ fluences. These characteristics are important for many specialized applications requiring radiation hardness.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5892059
• Report Number(s): SAND-84-2678C; CONF-850345-6; ON: DE85009501
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
BEAMS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
HADRONS
HARDENING
IONIZING RADIATIONS
LEPTON BEAMS
NEUTRONS
NUCLEONS
PARTICLE BEAMS
PHOTODIODES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSIENTS