Pulsed irradiation of optimized, MBE grown, AlGaAs/GaAs radiation hardened photodiodes. Rev

Conference · Sun Jan 01 00:00:00 EST 1984

OSTI ID:6673008

Wiczer, J J; Fischer, T A; Dawson, L R; Osbourn, G C; Zipperian, T E; Barnes, C E

An AlGaAs/GaAs double heterojunction, mesa isolated, photodiode grown by molecular beam epitaxy was irradiated with 18 MeV electrons, 1 to 10 MeV x-rays, and neutrons from a pulsed reactor. Test results indicate that the AlGaAs/GaAs photodiodes generate approximately 10 to 20 times less photocurrent during exposure to a pulse of ionizing-radiation than radiation hardened silicon PIN photodiodes. Studies of neutron induced permanent damage in the AlGaAs/GaAs photodiode show only small changes in optical responsivity and a factor of 8 increase in leakage currents after exposure to 3.6 x 10/sup 15/ neutrons/cm/sup 2/ and 900 krad gamma. The silicon PIN photodiode was exposed to only 28% of the fluence used on the AlGaAs photodiodes and we observed a 40% decrease in optical responsivity and a factor of 7000 increase in leakage current.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6673008
• Report Number(s): CONF-840712-2-Rev.; ON: DE84014984
• Resource Relation: Conference: 21. IEEE annual conference on nuclear and space radiation effects, Colorado Springs, CO, USA, 22 Jul 1984; Other Information: Portions are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
PHOTODIODES
MOLECULAR BEAM EPITAXY
PHYSICAL RADIATION EFFECTS
ALUMINIUM ARSENIDES
ELECTRON BEAMS
GALLIUM ARSENIDES
GAMMA RADIATION
LEAKAGE CURRENT
NEUTRON BEAMS
PHOTOCURRENTS
RADIATION HARDENING
SILICON
TESTING
X RADIATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
HARDENING
IONIZING RADIATIONS
LEPTON BEAMS
NUCLEON BEAMS
PARTICLE BEAMS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems