Development of high efficiency, low cost ZnSiAs/sub 2/ solar cells. Quarterly technical progress report No. 4, January 1, 1980-March 31, 1980

Technical Report · Tue Jan 01 04:00:00 EST 1980

DOI:https://doi.org/10.2172/6668268· OSTI ID:6668268

Andrews, J E

The p-ZnSiAs/sub 2//n-GaAs structures fabricated earlier were analyzed using the Electron Beam Induced Current technique and were found to have a diffused p-n junction in the GaAs. The short circuit current density associated with this structure was found to be a factor of 2 to 3 lower than predicted when analyzed as a ZnSiAs/sub 2//GaAs heteroface structure (the ZnSiAs/sub 2/ was assumed to behave as a window layer). Epitaxial growth has now been demonstrated for two additional substrates, Si and ..cap alpha..-Al/sub 2/O/sub 3/. In the case of Si, it was necessary to first grow a Si epi-layer followed by ZnSiAs/sub 2/ growth. Heretofore, epitaxial growth of ZnSiAs/sub 2/ has only been reported on Ge and GaAs substrates. n-ZnSiAs/sub 2//p-Si structures have been fabricated which exhibit photovoltaic behavior. It is not clear yet whether the photovoltaic behavior is due to a diffused junction in the Si or is indicative of a true heterostructure behavior. ZnSiAs/sub 2/ p-n junction formation continues to be investigated but as yet has not resulted in junction behavior.

• Research Organization: Research Triangle Inst., Research Triangle Park, NC (USA)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-79ET23001
• OSTI ID: 6668268
• Report Number(s): COO-3001-4
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CARRIER DENSITY
CHALCOGENIDES
COHERENT SCATTERING
CURRENTS
DIFFRACTION
DIRECT ENERGY CONVERTERS
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ELEMENTS
EPITAXY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
JUNCTIONS
LEPTON BEAMS
OXIDES
OXYGEN COMPOUNDS
P-N JUNCTIONS
PARTICLE BEAMS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON ARSENIDES
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
X-RAY DIFFRACTION
ZINC ARSENIDES
ZINC COMPOUNDS