Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Development of high efficiency, low cost ZnSiAs/sub 2/ solar cells. Quarterly technical progress report No. 1, April 9, 1979-June 30, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5910284· OSTI ID:5910284
The purpose of this study is to continue an investigation of one of the chalcopyrite semiconductors (ZnSiAs/sub 2/) in order to assess its suitability as a solar cell material. ZnSiAs/sub 2/ was previously synthesized using an open tube vapor phase epitaxial growth technique, and epitaxial layers of ZnSiAs/sub 2/ were deposited on Ge and GaAs substrates (both (001) and (112) ZnSiAs/sub 2/ on (100) and (111) substrates, respectively). Epitaxial deposits were routinely achieved while the surface appearance varied from mirror-like to a dull appearance which resulted from a relatively rough surface topography. Mirror-like finishes were clearly an achievable goal but required additional refinements in growth technique and substrate preparation before they could be routinely achieved. Three critical goals have been identified that must be achieved before ZnSiAs/sub 2/ can be realistically assessed: (1) hole concentrations must be reduced from the current 10/sup 18/ to 10/sup 19//cm/sup 3/ range to the 10/sup 16/ to 10/sup 17//cm/sup 3/ range; (2) n-type ZnSiAs/sub 2/ must be demonstrated; and (3) ZnSiAs/sub 2/ p-n junctions must be demonstrated. The approach taken and the progress made toward achieving these goals as well as the planned effort for the next quarter are described.
Research Organization:
Research Triangle Inst., Research Triangle Park, NC (USA)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-79ET23001
OSTI ID:
5910284
Report Number(s):
DOE/ET/23001-T1
Country of Publication:
United States
Language:
English