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U.S. Department of Energy
Office of Scientific and Technical Information

Development of high-efficiency, low-cost ZnSiAst/sub 2/ solar cells. Final report, April 9, 1979-June 8, 1980

Technical Report ·
DOI:https://doi.org/10.2172/6550397· OSTI ID:6550397
A research program with an ultimate goal of fabricating a ZnSiAs/sub 2//Si-web cascade solar cell is described. Calculations indicate, given a suitable material quality, that 23% efficiencies may be possible and that the Si-web substrate and materials proposed for this cell offer the potential for meeting the cost goals of $300/peak KW/sub e/. Significant results achieved under this contract include the successful conversion of the original open tube vapor phase epitaxial growth system to an organometallic growth approach which in turn led to reduced carrier concentrations, and improved material quality. This represents the first known chalcopyrite to be deposited via the MO-CVD technique. Additionally, epitaxial growth was obtained on ..cap alpha..-Al/sub 2/O/sub 3/ and Si substrates for the first time. ZnSiAs/sub 2//Si structures have been fabricated in which carrier collection from both sides of the interface was observed using the electron beam induced current measurement technique. N-type impurity doping experiments have been initiated with the objective of synthesizing n-ZnSiAs/sub 2/ via substitutional doping. (WHK)
Research Organization:
Research Triangle Inst., Research Triangle Park, NC (USA)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-79ET23001
OSTI ID:
6550397
Report Number(s):
DOE/ET/23001-T6
Country of Publication:
United States
Language:
English