Development of high efficiency, low cose ZnSiAs/sub 2/ solar cells RTI Project 41U-1803. Quarterly technical progress report No. 1, April 9-June 30, 1979
Technical Report
·
OSTI ID:5766591
An investigation of one of the chalcopyrite semiconductors (ZnSiAs/sub 2/) in order to assess its suitability as a solar cell material is described. In work previously performed, ZnSiAs/sub 2/ had been synthesized using an open tube vapor phase epitaxial growth technique. Epitaxial layers of ZnSiAs/sub 2/ had been deposited on Ge and GaAs substrates (both (001) and (112) ZnSiAs/sub 2/ on (100) and (111) substrates, respectively). Epitaxial deposits were routinely achieved while the surface appearance varied from mirror-like to a dull appearance which resulted from a relatively rough surface topography. Mirror-like finishes were clearly an achievable goal but required additional refinements in growth technique and substrate preparation before they could be routinely achieved. At this time three critical goals have been identified that must be achieved before ZnSiAs/sub 2/ can be realistically assessed. (1) hole concentrations must be reduced from the current 10/sup 18/ to 10/sup 19//cm/sup 3/ range to the 10/sup 16/ to 10/sup 17//cm/sup 3/ range; (2) n-type ZnSiAs/sub 2/ must be demonstrated; (3) ZnSiAs/sub 2/ p-n junctions must be demonstrated. The approach taken and the progress made toward achieving these goals are discussed as well as the planned effort for the next quarter. (WHK)
- Research Organization:
- Research Triangle Inst., Research Triangle Park, NC (USA)
- DOE Contract Number:
- AC04-79ET23001
- OSTI ID:
- 5766591
- Report Number(s):
- COO-23001-1
- Country of Publication:
- United States
- Language:
- English
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Sun Dec 31 23:00:00 EST 1978
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Development of high efficiency, low cost ZnSiAs/sub 2/ solar cells. Quarterly technical progress report No. 3, October 1, 1979-December 31, 1979. [P-ZnSiAs/sub 2//n-GaAs]
Technical Report
·
Sun Dec 31 23:00:00 EST 1978
·
OSTI ID:6626071
Development of high-efficiency, low-cost ZnSiAst/sub 2/ solar cells. Final report, April 9, 1979-June 8, 1980
Technical Report
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Mon Dec 31 23:00:00 EST 1979
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OSTI ID:6550397
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHALCOGENIDES
CHALCOPYRITE
COPPER COMPOUNDS
COPPER SULFIDES
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EPITAXY
GERMANIUM
GERMANIUM ARSENIDES
GERMANIUM COMPOUNDS
HOLES
ION IMPLANTATION
IRON COMPOUNDS
IRON SULFIDES
METALS
MINERALS
N-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR MATERIALS
SILICON ARSENIDES
SILICON COMPOUNDS
SOLAR CELLS
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZINC ARSENIDES
ZINC COMPOUNDS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHALCOGENIDES
CHALCOPYRITE
COPPER COMPOUNDS
COPPER SULFIDES
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EPITAXY
GERMANIUM
GERMANIUM ARSENIDES
GERMANIUM COMPOUNDS
HOLES
ION IMPLANTATION
IRON COMPOUNDS
IRON SULFIDES
METALS
MINERALS
N-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR MATERIALS
SILICON ARSENIDES
SILICON COMPOUNDS
SOLAR CELLS
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZINC ARSENIDES
ZINC COMPOUNDS