Development of high efficiency, low cost ZnSiAs/sub 2/ solar cells. Quarterly technical progress report No. 3, October 1, 1979-December 31, 1979. [P-ZnSiAs/sub 2//n-GaAs]

Technical Report · Mon Jan 01 04:00:00 EST 1979

DOI:https://doi.org/10.2172/6626071· OSTI ID:6626071

Andrews, J E

Significant achievements are described. The first is the successful deposition of mirror-like, single phase, epitaxial ZnSiAs/sub 2/ layers on 100 Ge substrates using the organometallic growth approach. Secondly, the quality of the first layers have already exceeded that of the material grown with the original growth system. Carrier concentrations (holes) are approximately one order of magnitude lower. Thirdly, amorphous (glassy) deposits of zinc silicon arsenide, which heretofore have not been reported, have been grown. Both p- and n-type conductivites have been observed. Finally, several p-ZnSiAs/sub 2//n-GaAs structures have been grown which exhibit photovoltaic behavior. AMO conversion efficiencies of 1 to 3% have been measured.

• Research Organization: Research Triangle Inst., Research Triangle Park, NC (USA)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-79ET23001
• OSTI ID: 6626071
• Report Number(s): DOE/ET/23001-3(Rev.)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
HOLES
MATERIALS
N-TYPE CONDUCTORS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SCATTERING
SEMICONDUCTOR MATERIALS
SILICON ARSENIDES
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE
X-RAY DIFFRACTION
ZINC ARSENIDES
ZINC COMPOUNDS