Development of high efficiency, low cost ZnSiAs/sub 2/ solar cells. Quarterly technical progress report No. 4, January 1, 1980-March 31, 1980
The p-ZnSiAs/sub 2//n-GaAs structures fabricated earlier were analyzed using the Electron Beam Induced Current technique and were found to have a diffused p-n junction in the GaAs. The short circuit current density associated with this structure was found to be a factor of 2 to 3 lower than predicted when analyzed as a ZnSiAs/sub 2//GaAs heteroface structure (the ZnSiAs/sub 2/ was assumed to behave as a window layer). Epitaxial growth has now been demonstrated for two additional substrates, Si and ..cap alpha..-Al/sub 2/O/sub 3/. In the case of Si, it was necessary to first grow a Si epi-layer followed by ZnSiAs/sub 2/ growth. Heretofore, epitaxial growth of ZnSiAs/sub 2/ has only been reported on Ge and GaAs substrates. n-ZnSiAs/sub 2//p-Si structures have been fabricated which exhibit photovoltaic behavior. It is not clear yet whether the photovoltaic behavior is due to a diffused junction in the Si or is indicative of a true heterostructure behavior. ZnSiAs/sub 2/ p-n junction formation continues to be investigated but as yet has not resulted in junction behavior.
- Research Organization:
- RTI International, Durham, NC (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-79ET23001
- OSTI ID:
- 6668268
- Report Number(s):
- COO-3001-4
- Country of Publication:
- United States
- Language:
- English
Similar Records
Development of high efficiency, low cose ZnSiAs/sub 2/ solar cells RTI Project 41U-1803. Quarterly technical progress report No. 1, April 9-June 30, 1979
Development of high efficiency, low cost ZnSiAs/sub 2/ solar cells. Quarterly technical progress report No. 1, April 9, 1979-June 30, 1979
Related Subjects
36 MATERIALS SCIENCE
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
SILICON ARSENIDES
EPITAXY
ZINC ARSENIDES
ALUMINIUM OXIDES
CARRIER DENSITY
ELECTRIC CONTACTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRON BEAMS
GALLIUM ARSENIDES
HALL EFFECT
P-N JUNCTIONS
PERFORMANCE
SILICON
SUBSTRATES
X-RAY DIFFRACTION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHALCOGENIDES
COHERENT SCATTERING
CURRENTS
DIFFRACTION
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
GALLIUM COMPOUNDS
JUNCTIONS
LEPTON BEAMS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
ZINC COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture