Ion beam induced diffusion and crystallization in high dose Er implanted Si
- Centre National d'Etudes des Telecommunications (CNET), 38 - Meylan (France)
- Oak Ridge National Lab., TN (USA)
High doses (1{times}10{sup 16}{minus}1{times}10{sup 17}/cm{sup 2}) of 145 keV and 175 keV Er+ ions were implanted into single-crystal Si using implantation temperatures (T{sub i}) between room temperature and 500{degree}C. Implanted samples were subsequently annealed using thermal annealing at 800{degree}C under vacuum as well as a 1 MeV As+ ion beam assisted annealing (IBAA) at 300{degree}C. During Er+ implantation, we find evidence for ion beam induced mobility for T{sub i} as low as 300{degree}C. A measurable redistribution of the implanted Er also occurs during the IBAA for Er doses greater than 5{times}10{sup 16}/cm{sup 2}. During Er+ implantation at T{sub i} >300{degree}C a polycrystalline ErSi{sub 2} phase is formed. For T{sub i} >400{degree}C the coherent precipitation of ErSi{sub 2} phase occurs within the crystalline Si matrix. During subsequent thermal annealing of samples implanted at T{sub i} >400{degree}C, the Er distribution narrows due to Ostwald ripening, and preferential alignment occurs to form a discontinuous buried layer of a single crystalline Er silicide. 16 refs., 7 figs.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- Sponsoring Organization:
- DOE/ER
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6480207
- Report Number(s):
- CONF-900936-19; ON: DE91002869
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601 -- Other Materials-- Preparation & Manufacture
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
CHARGED PARTICLES
CRYSTALLIZATION
CRYSTALS
DIFFUSION
ELEMENTS
ERBIUM IONS
ION BEAMS
ION IMPLANTATION
ION SOURCES
IONS
PHASE TRANSFORMATIONS
POLYCRYSTALS
SCHOTTKY EFFECT
SEMIMETALS
SILICON