Low-temperature mesotaxy of ion beam synthesized ErSi sub 2
- Centre National d'Etudes des Telecommunications, B. P. 98, 38240 Meylan, France (FR)
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (USA)
High doses (7{times}10{sup 16}--1.3{times}10{sup 17}/cm{sup 2}) of 170-keV Er{sup +} ions were implanted into single-crystal Si at an implantation temperature of {ital T}{sub {ital i}}=520 {degree}C. During Er implantation ErSi{sub 2} crystallizes as coherent precipitates within a crystalline Si matrix. During the subsequent annealing at 800 {degree}C a discontinuous buried layer of the single crystalline ErSi{sub 2} is formed. Implanted and annealed samples were subsequently reimplanted with 170-keV Er{sup +} ions at 250{lt}{ital T}{sub {ital i}}{lt}520 {degree}C. The second implantation results in a mesotaxial growth of the previously formed buried single-crystal ErSi{sub 2} layer for implantation temperatures {ital T}{sub {ital i}}{gt}300 {degree}C where ion beam induced, defect mediated diffusion of Er atoms in the Si matrix occurs during the implantation process.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5616299
- Journal Information:
- Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 70:3; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ANNEALING
CHARGED PARTICLES
CRYSTALS
ELEMENTS
ENERGY RANGE
EPITAXY
ERBIUM COMPOUNDS
ERBIUM IONS
ERBIUM SILICIDES
HEAT TREATMENTS
HIGH TEMPERATURE
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
MONOCRYSTALS
RARE EARTH COMPOUNDS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SYNTHESIS