Ion beam synthesis of buried single crystal erbium silicide

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6135713

Golanski, A ^[1]; Feenstra, R; Galloway, M D; Park, J L; Pennycook, S J; Harmon, H E; White, C W ^[2]

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1. Centre National d'Etudes des Telecommunications (CNET), 38 - Meylan (France)
2. Oak Ridge National Lab., TN (USA)

High doses (10{sup 16}--10{sup 17}/cm{sup 2}) of 170 keV Er{sup +} were implanted into single-crystal {l angle}111{r angle}Si at implantation temperatures between 350{degree}C and 520{degree}C. Annealing at 800{degree}C in vacuum following the implant, the growth and coalescence of ErSi{sub 2} precipitates leads to a buried single crystalline ErSi{sub 2} layer. This has been studied using Rutherford backscattering/channeling, X-ray diffraction, cross-sectional TEM and resistance versus temperature measurements. Samples implanted at 520{degree}C using an Er dose of 7 {times} 10{sup 16}/cm{sup 2} and thermally annealed were subsequently used as seeds for the mesoepitaxial growth of the buried layer during a second implantation and annealing process. Growth occurs meso-epitaxially along both interfaces through beam induced, defect mediated mobility of Er atoms. The crystalline quality of the ErSi{sub 2} layer strongly depends on the temperature during the second implantation. 12 refs., 4 figs.

• Research Organization: Oak Ridge National Lab., TN (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6135713
• Report Number(s): CONF-901105-61; ON: DE91006333; TRN: 91-001885
• Resource Relation: Conference: Fall meeting of the Materials Research Society, Boston, MA (USA), 24 Nov - 1 Dec 1990
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ERBIUM IONS
ION IMPLANTATION
ERBIUM SILICIDES
SYNTHESIS
ANNEALING
CRYSTAL GROWTH
SILICON
X-RAY DIFFRACTION
CHARGED PARTICLES
COHERENT SCATTERING
DIFFRACTION
ELEMENTS
ERBIUM COMPOUNDS
HEAT TREATMENTS
IONS
RARE EARTH COMPOUNDS
SCATTERING
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)
360602 - Other Materials- Structure & Phase Studies