Ion beam synthesis of buried single crystal erbium silicide
- Centre National d'Etudes des Telecommunications (CNET), 38 - Meylan (France)
- Oak Ridge National Lab., TN (USA)
High doses (10{sup 16}--10{sup 17}/cm{sup 2}) of 170 keV Er{sup +} were implanted into single-crystal {l angle}111{r angle}Si at implantation temperatures between 350{degree}C and 520{degree}C. Annealing at 800{degree}C in vacuum following the implant, the growth and coalescence of ErSi{sub 2} precipitates leads to a buried single crystalline ErSi{sub 2} layer. This has been studied using Rutherford backscattering/channeling, X-ray diffraction, cross-sectional TEM and resistance versus temperature measurements. Samples implanted at 520{degree}C using an Er dose of 7 {times} 10{sup 16}/cm{sup 2} and thermally annealed were subsequently used as seeds for the mesoepitaxial growth of the buried layer during a second implantation and annealing process. Growth occurs meso-epitaxially along both interfaces through beam induced, defect mediated mobility of Er atoms. The crystalline quality of the ErSi{sub 2} layer strongly depends on the temperature during the second implantation. 12 refs., 4 figs.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- Sponsoring Organization:
- DOE/ER
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6135713
- Report Number(s):
- CONF-901105-61; ON: DE91006333
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602 -- Other Materials-- Structure & Phase Studies
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL GROWTH
DIFFRACTION
ELEMENTS
ERBIUM COMPOUNDS
ERBIUM IONS
ERBIUM SILICIDES
HEAT TREATMENTS
ION IMPLANTATION
IONS
RARE EARTH COMPOUNDS
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SYNTHESIS
X-RAY DIFFRACTION