Ion-beam synthesis of buried yttrium silicide
- Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering
- Sandia National Labs., Albuquerque, NM (USA)
Buried single-crystal YSi{sub 1.7} layers have been synthesized using high fluence implants of 330 keV yttrium ions into (111) Si held at 450{degrees}C followed by post-implant anneals of 1000{degrees}C. Rutherford backscattering spectrometry showed that an implant fluence of 3.6 {times} 10{sup 17} Y/cm{sup 2} forms a continuous layer of uniform thickness. Whereas, implant fluences of 1--2 {times} 10{sup 17} Y/cm{sup 2} form a thin continuous YSi{sub 1.7} layer with what are believed to be Y-silicide precipitates above and below the YSi{sub 1.7} layer. Strains resulting from the YSi{sub 1.7} layers were evaluated from x-ray rocking curves using a double crystal diffractometer. 12 refs., 3 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- DOE/DP
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5066980
- Report Number(s):
- SAND-89-1726C; CONF-891119--76; ON: DE90006018
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CHARGED PARTICLES
ELASTIC SCATTERING
HEAT TREATMENTS
ION IMPLANTATION
IONS
RUTHERFORD SCATTERING
SCATTERING
SILICIDES
SILICON COMPOUNDS
SYNTHESIS
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS
YTTRIUM IONS
YTTRIUM SILICIDES