Buried silicide synthesis and strain in cobalt-implanted silicon
Silicon (001) substrates were implanted with 350 keV Co at room temperature and 450/sup 0/C with fluence of from 1 x 10/sup 17/ Co/cm/sup 2/ to 6 x 10/sup 17/ Co/cm/sup 2/. All samples were annealed at 1000/sup 0/C in order to form the CoSi/sub 2/ phase. Concentration profiles were determined with Rutherford backscattering spectrometry (RBS), and the associated strain profiles were analyzed with double-crystal x-ray rocking curve measurements. Ion channeling was also used to characterize the silicide formation and crystal quality. An implantation of 6 x 10/sup 17/ Co/cm/sup 2/ at 450/sup 0/C forms a single-crystal CoSi/sub 2/ layer while lower fluences do not. A continuous, buried CoSi/sub 2/ single-crystal layer is formed for the 3 x 10/sup 17/ Co/cm/sup 2/ sample implanted at 450/sup 0/C and annealed at 1000/sup 0/C. The continuous CoSi/sub 2/ layer is thicker than the critical layer thickness for a fully coherent film, and therefore the layer partially relaxes. A relaxation of 50% of the fully coherent value is observed for this buried silicide system. 5 refs., 4 figs., 1 tab.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5554624
- Report Number(s):
- SAND-87-1588C; CONF-871124-51; ON: DE88003806
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
BACKSCATTERING
CHANNELING
CHARGED PARTICLES
COBALT COMPOUNDS
COBALT IONS
COBALT SILICIDES
CRYSTALS
ELEMENTS
FILMS
HEAT TREATMENTS
HELIUM IONS
ION CHANNELING
ION IMPLANTATION
IONS
LAYERS
MONOCRYSTALS
RELAXATION
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
STRAINS
SYNTHESIS
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS