Silicide structural evolution in high-dose cobalt-implanted Si(100) crystals

Journal Article · Fri Sep 15 04:00:00 EDT 1989 · Physical Review (Section) B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.40.6368· OSTI ID:5574114

Tan, Z; Budnick, J I; Sanchez, F H ^[1]; Tourillon, G ^[2]; Namavar, F; Hayden, H C ^[3]

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1. Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269-3046 (US)
2. Laboratoire pour l'Utilisation du Rayonnement Electromagnetique, Batiment 209D, 91405 Orsay CEDEX, France
3. Department of Physics and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269-3046

The silicide structure in high-dose ((1--8){times}10{sup 17} Co/cm{sup 2}) cobalt-implanted Si(100) crystals is studied by extended x-ray-absorption fine structure, x-ray diffraction, and Rutherford backscattering spectrometry. As the implant dose increases we observe silicide structural evolution from a locally ordered CoSi{sub 2} at a dose of 1{times}10{sup 17} Co/cm{sup 2}, to long-range-ordered CoSi{sub 2} and CoSi at 3{times}10{sup 17} Co/cm{sup 2}, and to a short-range-ordered and highly defective CoSi-like structure at 8{times}10{sup 17} Co/cm{sup 2}. We propose a model in which Co atoms preferentially occupy the interstitial site, first in silicon then in CoSi{sub 2}, to understand the silicide-formation mechanism in the implanted system. The short-range-ordered silicides, observed for the first time, and the structural evolution are discussed in terms of both the CoSi{sub 2} and CoSi structures and the proposed model. Single-phase and strongly oriented CoSi{sub 2} are obtained in samples annealed at 700 {degree}C.

• OSTI ID: 5574114
• Journal Information: Physical Review (Section) B: Condensed Matter; (USA), Journal Name: Physical Review (Section) B: Condensed Matter; (USA) Vol. 39:9; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION SPECTRA
BREMSSTRAHLUNG
CHARGED PARTICLES
COBALT COMPOUNDS
COBALT IONS
COBALT SILICIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DIFFRACTION
ELASTIC SCATTERING
ELECTROMAGNETIC RADIATION
ELEMENTS
FINE STRUCTURE
INTERSTITIALS
ION IMPLANTATION
IONS
MONOCRYSTALS
POINT DEFECTS
RADIATIONS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SPECTRA
STRUCTURAL MODELS
SYNCHROTRON RADIATION
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION
X-RAY SPECTRA