A soft-x-ray-emission investigation of cobalt implanted silicon crystals

Journal Article · Sat Jun 01 00:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.347508· OSTI ID:5558050

Jia, J J; Callcott, T A; O'Brien, W L; Dong, Q Y ^[1]; Mueller, D R; Rubensson, J; Ederer, D L ^[2]; Tan, Z; Namavar, F; Budnick, J I ^[3]

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1. University of Tennessee, Knoxville, Tennessee 37996 (USA)
2. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (USA)
3. University of Connecticut, Storrs, Connecticut 06269 (USA)

The Si {ital L}{sub 2,3} emission spectra of silicon crystals implanted with Co at doses of (1--8) {times} 10{sup 17} Co/cm{sup 2} have been examined using soft-x-ray-emission (SXE) spectroscopy. At the lowest dose, the spectra are little modified from that of crystalline Si, indicating that only a small fraction of Si is in the form of silicides within the probe depth of SXE spectroscopy. For higher doses and implant profiles with Co extending to the surface, there is clear evidence for ordered CoSi{sub 2} combined with richer Co phases, but little evidence for pure Si or for ordered regions of CoSi.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5558050
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:11; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CHARGED PARTICLES
COBALT COMPOUNDS
COBALT IONS
COBALT SILICIDES
CRYSTALS
ELECTROMAGNETIC RADIATION
ELEMENTS
ION IMPLANTATION
IONIZING RADIATIONS
IONS
RADIATIONS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SIMULATION
SOFT X RADIATION
SPECTRA
TRANSITION ELEMENT COMPOUNDS
X RADIATION
X-RAY SPECTRA